8mm DIP Infrared LEDs

Technical Specifications

8mm DIP Infrared LEDs (710–940 nm)

Package Type: DIP 8mm Round (Ø8.0 mm, Through-Hole)
Dimensions: 8.0 mm (Lens) × 11.0 mm (Body Height)
Wavelength Range: 710–940 nm
Available Peak Wavelengths: 730 nm, 850 nm, 940 nm
Radiant Intensity (Ie): 20 – 130 mW/sr (Rank-specific; high-power models reach up to 130 mW/sr @ 850 nm)
Forward Voltage (VF): 1.2 V – 3.0 V (typical @ 20 mA, varies by wavelength and chip structure)
Forward Current: 20 mA (Continuous), 150 mA (Pulsed)
Viewing Angle: 15° (Narrow Beam) or 50° (Wide Beam)
Substrate: Silver-plated Iron Lead Frame
Lens Appearance: Water Clear Epoxy
Chip Material: Quaternary AlGaAs / GaAs
Chip Brands: Epistar, Sanan, OptoTech (Selected by performance grade)
Lead Length Options: 18/16mm (Standard) or 28/26 mm (Long)
Operating Temperature: −40°C to +85°C
Storage Temperature: −40°C to +100°C
Absolute Maximum Ratings:
Junction Temperature (Tj): +100°C
ESD Withstand Voltage: ≥2 kV (HBM)
Compliance: RoHS, REACH, CE, EN 60425 (Photobiological Safety)

Note: This series offers both narrow (15°) and wide (50°) viewing angles for flexible optical design. The 850 nm models deliver the highest radiant intensity (up to 130 mW/sr), ideal for long-range night vision illumination, while 940 nm models provide completely covert operation with no visible glow. Standard silicon photodiodes are recommended for signal reception across all listed wavelengths.

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