High-Power Infrared LEDs

Technical Specifications

High-Power Infrared (IR) LEDs (730–940 nm)

  • Package Type: SMD  High-Power LEDs
  • Wavelength Range: 730–940 nm
  • Available Peak Wavelengths:
    • 730 nm, 810 nm, 850 nm, 875 nm, 940 nm
  • Chip Material: GaAs / AlGaAs (wavelength-dependent)
  • Chip Source: Epistar, Sanan, OSRAM, CREE(selected by performance grade)
  • Chip Sizes: 30×30 mil, 35×35 mil, 40×40 mil (configuration-specific)
  • Forward Voltage (VF): 1.2 V – 1.5 V (typical @ rated current)
  • Operating Current: 350 mA – 1000 mA (continuous, depending on rank and thermal design)
  • Rated Optical Power: 1 W – 5 W (varies by wavelength and array configuration)
  • Radiant Intensity: Rank-specific; full performance table available upon request
  • Viewing Angle: 60°, 90°, or 120° (lens-dependent)
  • Substrate: High thermal conductivity copper
  • Lens Appearance: Clear, colorless silicone (IR-transparent) or with optional lens optics
  • Operating Temperature: −40°C to +85°C
  • Storage Temperature: −40°C to +100°C
  • Absolute Maximum Ratings:
    • Junction Temperature (Tj): +150°C
    • ESD Withstand Voltage: ≥2 kV (HBM)
  • Compliance: RoHS 3, REACH, IEC/EN 62471 (Photobiological Safety – Risk Group 1 or 2 depending on power)
Note: For 850 nm: emits a faint red glow visible to the human eye, optimal for standard silicon CCD/CMOS cameras.
For 940 nm: completely covert (no visible glow), ideal for discreet surveillance and night vision applications.
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