3mm DIP Infrared LEDs

Technical Specifications

3mm DIP Infrared LEDs (710–940 nm)

Package Type: DIP 3mm Round (Ø3.0 mm, Through-Hole)
Wavelength Range: 710–940 nm
Available Peak Wavelengths:
710 nm, 730 nm, 750 nm, 780 nm, 850 nm, 880 nm, 940 nm
Radiant Intensity (Ie): 5 – 13 mW/sr (@ 20 mA, Rank-specific)
Forward Voltage (VF): 1.2 V – 1.6 V (typical @ 20 mA)
Forward Current: 30 mA (continuous), 150 mA (pulsed)
Viewing Angle: 30° (Narrow Beam)
Substrate: Silver-plated Iron Lead Frame
Lens Appearance: Water Clear Epoxy
Chip Material: Quaternary AlGaAs / GaAs
Chip Brands: Epistar, Sanan, OptoTech, Vishay (selected by performance grade)
Lead Length Options: 18/16 mm (Short) or 28/26 mm (Long)
Operating Temperature: −40°C to +85°C
Storage Temperature: −40°C to +100°C
Absolute Maximum Ratings:
Junction Temperature (Tj): +100°C
ESD Withstand Voltage: ≥2 kV (HBM)
Compliance: RoHS, REACH, IEC/EN 62471 (Photobiological Safety)

Note: For wavelengths >850 nm (e.g., 940 nm), the emission is invisible to the human eye, making it ideal for covert security applications. Standard silicon photodiodes exhibit peak responsivity in the 850–950 nm range, ensuring optimal signal reception for these LEDs without requiring expensive InGaAs detectors.

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