3535 Far‑Infrared LEDs

Technical Specifications

3535 Far-Infrared LEDs (1000–2060 nm)

  • Package Type: SMD (3535 size, 3.5 mm × 3.5 mm)
  • Wavelength Range: 1000–2060 nm
  • Available Peak Wavelengths:
    • 1050 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, 1600 nm, 1750 nm, 1950 nm, 2060 nm
  • Chip Material: GaAs / AlGaAs / InGaAs (wavelength-dependent)
  • Chip Source: CREE, OSRAM, Toyoda Gosei, Epistar, Sanan (selected by performance grade)
  • Chip Sizes: 12×35 mil, 14×28 mil, 16×30 mil (configuration-specific)
  • Forward Voltage (VF): 1.4 V – 2.4 V (typical @ rated current)
  • Operating Current: 300 mA – 700 mA (continuous, depending on rank)
  • Rated Optical Power: 1 W – 4 W (varies by wavelength and thermal design)
  • Radiant Intensity: Rank-specific; full performance table available upon request
  • Viewing Angle: 120°
  • Substrate: High-thermal-conductivity ceramic (AlN or Al2O3)
  • Lens Appearance: Clear, colorless silicone
  • Operating Temperature: −40°C to +85°C
  • Storage Temperature: −40°C to +100°C
  • Absolute Maximum Ratings:
    • Junction Temperature (Tj): +150°C
    • ESD Withstand Voltage: ≥2 kV (HBM)
  • Compliance: RoHS 3, REACH, IEC/EN 62471 (Photobiological Safety – Risk Group 1)
Note: For wavelengths >1400 nm, standard silicon photodiodes have low responsivity.
InGaAs or PbS detectors are recommended for optimal signal reception.

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