2835 Far‑Infrared LEDs

Technical Specifications

2835 Far‑Infrared LED (1000–1600 nm)

  • Package Type: SMD (2835 size, 2.8 mm × 3.5 mm)
  • Wavelength Range: 1000–1600 nm
  • Available Peak Wavelengths:
    • 1050 nm, 1200 nm, 1300 nm, 1450 nm, 1550 nm
  • Rated Optical Power: 0.2 W – 0.5 W
  • Forward Voltage (VF): 1.8 V – 2.2 V (typical @ rated current)
  • Forward Current: 60 mA – 150 mA (continuous)
  • Radiant Intensity: Rank-specific; full performance table available for 1050–2060 nm series upon request
  • Viewing Angle: 120°
  • Substrate: Copper-based lead frame with high thermal conductivity
  • Lens Appearance: Clear.
  • Chip Material: GaAs, AlGaAs, InGaAs (wavelength-dependent)
  • Chip Brands: CREE, OSRAM, Toyoda Gosei, Epistar, Sanan (selected by performance grade)
  • Chip Sizes: 10×30 mil, 14×28 mil (configuration-specific)
  • Operating Temperature: −40°C to +85°C
  • Storage Temperature: −40°C to +100°C
  • Absolute Maximum Ratings:
    • Junction Temperature (Tj): +150°C
    • ESD Withstand Voltage: ≥2 kV (HBM)
  • Compliance: RoHS, REACH, IEC/EN 62471 (Photobiological Safety)
Note: For wavelengths >1400 nm, standard silicon photodiodes have significantly reduced responsivity. InGaAs or extended-InGaAs detectors are recommended for optimal signal reception in 1550 nm applications.
 

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