2012 infrared LEDs

• Package Type: SMD (2012 size, 2.0 mm × 1.2 mm × 0.8 mm)
• Wavelength Range: 710–940 nm
• Available Peak Wavelengths: 710 nm, 730 nm, 750 nm, 780 nm, 850 nm, 880 nm, 940 nm
• Rated Optical Power: 0.06 W (Typical @ 20 mA)
• Forward Voltage (V_F): 1.2 V – 2.0 V (typical @ 20 mA)
• Forward Current: 20 mA (continuous), 50 mA (pulse)
• Radiant Intensity (I_e): 0.2 – 3.0 mW/sr (Rank-specific, depending on wavelength and bin)
• Viewing Angle: 120°
• Substrate: Copper alloy lead frame with optimized thermal dissipation
• Lens Appearance: Water Clear Silicone
• Chip Material: AlGaAs / GaAs (wavelength-dependent)
• Chip Brands: Epistar, Sanan, Osram, or equivalent (selected by performance grade)
• Chip Sizes: 8×10 mil, 9×11 mil (configuration-specific)
• Operating Temperature: −20°C to +85°C
• Storage Temperature: −40°C to +100°C
• Absolute Maximum Ratings:
  • Junction Temperature (T_j): +125°C
  • ESD Withstand Voltage: ≥2 kV (HBM)
• Compliance: RoHS, REACH, IEC/EN 62471 (Photobiological Safety)

Note: These devices are optimized for standard silicon photodiode responsivity in the near-infrared spectrum. The 850 nm variant offers a slight visible red glow suitable for alignment, while the 940 nm variant is fully covert for security applications. Ensure proper current limiting resistors are used to maintain forward current within the 20 mA continuous rating.