High-Power Infrared LEDs

Technical Specifications

High-Power Infrared (IR) LEDs (730–940 nm)

  • Package Type: SMD  High-Power LEDs
  • Wavelength Range: 730–940 nm
  • Available Peak Wavelengths:
    • 730 nm, 810 nm, 850 nm, 875 nm, 940 nm
  • Chip Material: GaAs / AlGaAs (wavelength-dependent)
  • Chip Source: Epistar, Sanan, OSRAM, CREE(selected by performance grade)
  • Chip Sizes: 30×30 mil, 35×35 mil, 40×40 mil (configuration-specific)
  • Forward Voltage (VF): 1.2 V – 1.5 V (typical @ rated current)
  • Operating Current: 350 mA – 1000 mA (continuous, depending on rank and thermal design)
  • Rated Optical Power: 1 W – 5 W (varies by wavelength and array configuration)
  • Radiant Intensity: Rank-specific; full performance table available upon request
  • Viewing Angle: 60°, 90°, or 120° (lens-dependent)
  • Substrate: High thermal conductivity copper
  • Lens Appearance: Clear, colorless silicone (IR-transparent) or with optional lens optics
  • Operating Temperature: −40°C to +85°C
  • Storage Temperature: −40°C to +100°C
  • Absolute Maximum Ratings:
    • Junction Temperature (Tj): +150°C
    • ESD Withstand Voltage: ≥2 kV (HBM)
  • Compliance: RoHS 3, REACH, IEC/EN 62471 (Photobiological Safety – Risk Group 1 or 2 depending on power)
Note: For 850 nm: emits a faint red glow visible to the human eye, optimal for standard silicon CCD/CMOS cameras.
For 940 nm: completely covert (no visible glow), ideal for discreet surveillance and night vision applications.

This website uses cookies to ensure you get the best experience. By continuing to browse, you agree to our Privacy Policy.